最近の研究成果;
【論文・国際会議Papers & Proceedings】

Publications in the Oshima Lab in 1999-1995


【1999】

  1. H. Fujioka, K. Ikeda, K. Ono, M. Yoshimoto, H. Koinuma and M. Oshima, "Epitaxial growth of III-V semiconductors on Ferrite substrates" Ext. Abstracts of 1999 Solid State Devices and Materials, Tokyo, 1999, pp. 558.
  2. Y. Hagimoto, T. Fujita, K. Ono, H. Fujioka, M. Oshima, K. Hirose and M. Tajima, "Characterization of carrier-trapping phenomena in ultra-thin chemical oxides using XPS time-dependent measurement", Appl. Phys. Lett. 74 (1999) 2011-2013.
  3. K. Horiba, K. Ono, H. Fujioka, M. Oshima, H. Miki, A. Fukizawa, M. Okuyama , and Y. Watanabe, "Modification of metal/GaN contacts with GaAs interlayers" J. Appl. Phys. 85 (1999) 6539-6541.
  4. T. Ikeda, H. Fujioka, K. Ono, M. Oshima, H. Akinaga, M. Yoshimoto, H. Maruta, H. Koinuma, and Y. Watanabe, "Epitaxial Growth of MnSb on single crystalline ferrite substrates" J. Magnetic Society of Japan, Vol. 23, 685-687 (1999).
  5. K. Ikeda, H. Fujioka, S. Hayakawa, K. Ono, M. Oshima, M. Yoshimoto, H. Maruta, H. Koinuma, K. Inaba and R. Matsuo, "Epitaxial growth of InAs on single-crystalline MnZn-ferrite substrates" Jpn. J. Appl. Phys. 38, L854-L856 (1999).
  6. S. Kawaguchi, K. Ono, K. Horiba, M. Mizuguchi, S. Hayakawa, H. Fujioka, M. Oshima, T. Koide, Y. Miyanishi, T. Nakajima and H. Takenaka, "M23 Edge Core-level Magnetic Circular Dichroism Measurements of Cu/Co Multilayers", Jpn. J. Appl. Phys. Suppl. 38-1 (1999) 419-422.
  7. T. Mano, K. Watanabe, S. Tsukamoto, H. Fujioka, M. Oshima and N. Koguchi, "A new self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy", Jpn. J. Appl. Phys. 38, L1009-L1011 (1999).
  8. M. Mizuguchi, H. Akinaga, K. Ono, H. Fujioka and M. Oshima, "Structural and magneto-optical properties of MnSb dots on GaAs (001) substrates" Proceedings of 4th Int'l Symposium on Advanced Physical Fields: Quantum Phenomena in Advanced Materials at High Magnetic Fields, p.327-329 (1999), Tsukuba.
  9. K. Miyazaki, H. Fujioka, M. Oshima and H. Koinuma, "A novel a-Si:H solar cells designed by a two-dimensional device simulation" Bulletine of Materials Sciences 22, 869-872(1999).
  10. K. Miyazaki, N. Matsuki, H. Shinno, H. Fujioka, M. Oshima and H. Koinuma, "Device simulation and fabrication of field effect solar cells" Bulletine of Materials Sciences 22, 729-733 (1999).
  11. K. Ono, T. Uragami, M. Mizuguchi, H. Fujioka, M. Oshima, M. Tanaka, H. Akinaga, and Y. Watanabe, "Formation of low-dimensional structures of Manganese Pnictides" J. Magnetic Society of Japan, Vol. 23, 688-690 (1999).
  12. K. Ono, M. Mizuguchi, T. Uragami, T. Mano, H. Fujioka, M. Oshima, M. Tanaka, and Y. Watanabe, "Formation of MnAs Dots on S-Passivated GaAs(100) Substrates" J. Magnetic Society of Japan, Vol. 23, 691-693 (1999).
  13. M. Oshima, Y. Hagimoto, H. Fujioka, K. Ono, H.W. Yeom, K. Hirose and M. Tajima, "Time-depemdemt X-ray photoelectron spectroscopy for hole and electron trapping phenomena in SiO2/SiON ultra thin oxide films" Proceedings of First Int'l Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, 23a-6-5, Oct. 1999, Toyo Univ. Tokyo.
  14. M. Oshima, K. Ono, M. Mizuguchi, T. Uragami, H. Fujioka, M. Tanaka, and Y. Watanabe, "Photoelectron Spectroscopy and Magnetic Properties of Manganese Pnictides Nanocrystals Formed on Passivated GaAs Substrates", Jpn. J. Appl. Phys. Suppl. 38-1 (1999) 373-376.
  15. M. Oshima, "Synchrotron Radiation Analysis of Semiconductor Surfaces and Formation of Nano Structures" New Frontiers of Science and Technology edited by L. Esaki (Proc. of Int'l Conf. on Science Frontier Tsukuba 999 (SFT999) P. 331-338, 1999.
  16. T. Uragami, K. Ono, M. Mizuguchi,T. Mano, H. Fujioka, M. Oshima, M. Tanaka, and Y. Watanabe, "Growth of MnAs on S- and Se-passivated GaAs substrates", J. Magnetic Society of Japan, Vol. 23, 694-696 (1999).
  17. Y. Xiao, S. Hayakawa, Y. Gohshi, M. Oshima, F. Izumi, H. Okudera, H. Toraya and K. Ohsumi, "A Rietveld-analysis Program for X-ray Powder Spectro-diffractometry", Bull. Powder Diffraction, 14 (1999) 106.
  18. Y. Xiao, S. Hayakawa, Y. Gohshi, M. Oshima, H. Okudera, H. Toraya and K. Ohsumi, " Site-Selective Chemical State Analysis for Magnetic Structure Using Powder Spectro-Diffractometry", Jpn. J. Appl. Phys. Suppl. 38-1 (1999) 381.
  19. A. Yamaguchi, S. Hayakawa, K. Ono, H. Fujioka and M. Oshima, "Spin state analysis of epitaxial Mn compunds films using high resolution X-ray fluorescence" Jpn. J. Appl. Phys. 38, 5077-5078 (1999).
  20. Y. Yoshimura, K. Ono, H. Fujioka, Y. Sato, M. Uematsu, Y. Baba, H. Hirose and M.Oshima, "Chemical States of Piled-up Phosphorus and Arsenic atoms at the SiO2/Si interface", Jpn. J. Appl. Phys. Suppl. 38-1 (1999) 552-555.


【1998】

  1. H. Akazawa, M. Sugiyama, S. Maeyama, M. Oshima, and Y. Watanabe, "Photo-stimulated H+ desorption from Si-based materials initiated by deep-core-level excitation", Phys. Rev. B57, 4883-4887 (1998).
  2. H.Fujioka, M.Oshima, C. Hu, M. Sumiya, N.Matsuki, K.Miyazaki, and H.Koinuma, "Characteristics of Field Effect a-Si:H Solar Cells", J. Non-Crystalline Solids, 227-230, 1287-1290 (1998).
  3. K. Horiba, K. Ono, H. Fujioka, M.Oshima, H. Miki, A. Fukizawa, M. Okuyama and Y. Watanabe, "SRPES Study of GaAs Interlayers for p-GaN Contacts", Proc. of 2nd Int'l Symp. on Blue Laser and Light Emitting Diodes, Chiba, Japan (1998) p. 365-368.
  4. T. Ikeda, H. Fujioka, K. Ono, M. Oshima, H. Akinaga, M. Yoshimoto, H. Maruta, H. Koinuma, and Y. Watanabe, "Epitaxial Growth of MnSb on single crystalline ferrite substrates" J. Magnetic Society of Japan, Vol. 23, 685-687 (1998).
  5. T. Kiyokura, F. Maeda, Y. Watanabe, E. Shigemasa, A. Yagishita, M. Oshima, Y. Iketaki and Y. Horikawa, "SUBMICRON-AREA HIGH-ENERGY-RESOLUTION PHOTOELECTRON SPECTROSCOPY SYSTEM", J. Synchrotron Radiation 5,1111-1113 (1998).
  6. T. Kiyokura, F. Maeda, Y. Watanabe, E. Shigemasa, A. Yagishita, M. Oshima, Y. Iketaki and Y. Horikawa, "Photoelectron microscospectroscopy observations of a cleaved surface of semiconductor double heterostructure" J. Vac. Sci. and Technol. A16 (1998) 1086-1090.
  7. T. Mano, K. Ono, H. Fujioka, Y. Watanabe and M. Oshima, "InAs Nanocrystal Growth on Si(100)", Appl. Surf. Sci. 130-132, 760-764 (1998).
  8. T. Monguchi, H. Fujioka, K. Ono, M. Oshima, et al., "Structural and Optical Characterization of Porous 3C-SiC", J. Elec. Chem. Soc., 145, 2241-2243 (1998).
  9. M. Nakamura, M. Shuzo, K. Ono, H. Fujioka, M. Tanaka, T. Nishinaga, Y. Watanabe and M. Oshima, "The Evidence for a Preferential Growth of a MnAs Thin Film on an As-Preabsorbed Si(001) Surface", Appl. Surf. Sci. 130-132, 128-132 (1998).
  10. K. Ono, T. Uragami, M. Mizuguchi, H. Fujioka, M. Oshima, M. Tanaka, H. Akinaga, and Y. Watanabe, "Formation of low-dimensional structures of Manganese Pnictides" J. Magnetic Society of Japan, Vol. 23, 688-690 (1998).
  11. K. Ono, M. Mizuguchi, T. Uragami, T. Mano, H. Fujioka, M. Oshima, M. Tanaka, and Y. Watanabe, "Formation of MnAs Dots on S-Passivated GaAs(100) Substrates" J. Magnetic Society of Japan, Vol. 23, 691-693 (1998).
  12. T. Uragami, K. Ono, M. Mizuguchi,T. Mano, H. Fujioka, M. Oshima, M. Tanaka, and Y. Watanabe, "Growth of MnAs on S- and Se-passivated GaAs substrates", J. Magnetic Society of Japan, Vol. 23, 694-696 (1998).
  13. N. Matsuki, H. Fujioka, M. Oshima, M. Sumiya, R. Maruyama, S. Yasuda, Y. Hishitani, and H. Koinuma, "Fabrication of dielectric oxide/a-Si:H junction for field effect solar cell", NIMC International Symposium on Photoreaction Control and Photofunctional Materials, Tsukuba, 1998,129(1998).
  14. F. Maeda, Y. Watanabe, M. Oshima, M. Taguchi, and R. Oiwa, "REALTIME ANALYSIS FOR MBE BY TIME-RESOLVED CORE-LEVEL PHOTOELECTRON SPECTROSCOPY" J. Synchrotron Radiation 5, 1026-1028 (1998).
  15. K. Ono, M. Oshima, K. Shimada, T. Sendohda, H. Fukutani, A. Kakizaki and K. Tanaka, "SPIN-RESOLVED PHOTOEMISSION STUDIES OF Ni(110)-ADSORBATE SYSTEMS", J. Electron Spectr. Rel. Phenom. 92, 49-52 (1998).
  16. K. ONO, M. OSHIMA, A. SASAHARA, Y. OKAWA, A. KIMURA, A. HARASAWA, A. KAKIZAKI and K. TANAKA, "ANGLE-RESOLVED PHOTOEMISSION STUDY OF Ag / Cu(110)", Proceedings of the Int'l ISSP Symposium, 1997 (Tokyo).
  17. M.Oshima, Y. Yoshimura, K. Ono, H. Fujioka et al., "Resonant Auger electron spectroscopy for analysis of the chemical state of phosphrous segregated at SiO2/Si interfaces", J. Electron Spectr. Rel. Phenomena 88-91, 603-607 (1998).
  18. M. Oshima, M. Shuzo, K. Ono, H. Fujioka, Y. Watanabe, S. Miyanishi and H. Akinaga, "Schottky barrier formation of ferromagnetic MnSb /GaAs", Appl. Surf. Sci. 130-132, 892-898 (1998).
  19. Y. Xiao, S. Hayakawa, Y. Gohshi, M. Oshima, H. Okudera, H. Toraya and K. Ohsumi, "In-advance simulation and chemical state analysis by spectro-diffractometry", Chemistry Letters 1998 (1998) 761-762.
  20. Y. Xiao, S. Hayakawa, Y. Gohshi, M. Oshima, H. Okudera, H. Toraya and K. Ohsumi, "Spectro-diffractometry for chemical-state analysis based on in-advance simulation", Bull. Chem. Soc. Jpn, 718 (1998) 2375-2380.
  21. Y. Xiao, S. Hayakawa, Y. Gohshi, and M. Oshima, "The possibility of Discrimination of Different Chemical States by Energy Dispersive X-ray Spectroscopy", Analytical Science 14 (1998) 1139-1144.


【1997】

  1. H. Fujioka, M. Oshima, C. Hu, M. Sumiya, K. Miyazaki, and H. Koinuma, "2-dimensional device simulation of field effect a-Si:H Solar cell", Proceedings of the Fourteenth European PV Solar Energy Conference (1997) 2518.
  2. H.Fujioka, M.Oshima, C. Hu, M. Sumiya, N.Matsuki, K.Miyazaki, and H.Koinuma, "Characteristics of Field Effect a-Si:H Solar Cells", Proceedings of the 17th international conference on amorphous and microcrystalline semiconductors science and technology (1997) .
  3. H. Fujioka, M. Oshima, C. Hu, G. Collins, M. Sumiya, R. Maruyama, and H. Koinuma, "Field effect solar cell", Proceedings of the First Conference on Future Generation of Photovoltaic Techmology" ,Colorad,1997,259-266(1997) 159.
  4. H. Fujioka, Y. Yoshimura, K. Ono, Y. Sato, S. Maeyama, and M. Oshima, "Synchrotron radiation photoelectron spectroscopy and XANES of phosphorus atoms segregated at the SiO2/Si interface", Proceedings of the Fourth International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films",Montreal,1997,432-442(1997).
  5. H. Fujioka, K. Ono, Y. Sato, C. Hu, and M. Oshima, "Simulation of 2-dimensional hole gas for PMOS devices with phosphrus pile-up", Extended abstract of the International Conference on Solid State Devices and Materials",Hamamatsu,1997,508-509(1997).
  6. H. Koinuma, R. Maruyama, M. Sumiya, H. Fujioka, and M. Oshima, "Concept and fabrication of field effect solar cell", Proceedings of the Fourteenth European PV Solar Energy Conference (1997) 2507.
  7. F. Maeda, Y. Watanabe, and M. Oshima, "Realtime analysis of GaSb(001) during Sb desorption by core-level photoelectron spectroscopy", Phys. Rev. Lett. 78, 4233-4236 (1997) .
  8. F. Maeda, Y. Watanabe and M Oshima "Real-time observation of alternating growth on GaSb(001) using core-level Photoelectron spectroscopy", Appl. Surf. Sci. 112, 69-74 (1997).
  9. M. Oshima, "Synchrotron Radiation", Encyclopedia of Applied Physics, Vol.20, p. 355-388, (1997): VCH Publishers, Inc., 1997, New York.
  10. Y. Sato, Y. Yoshimura, K. Ono, H. Fujioka, S. Maeyama and M. Oshima, "Chemical State of Phosphorus at the Silicon Surface", Jpn. J. Appl. Phys. 36, 4299-4300 (1997).
  11. Y. Yoshimura, K. Ono, H. Fujioka, Y. Sato, S. Maeyama, Y. Baba, K.Yoshii, T. A. Sasaki, and M. Oshima, "Characterization of phosphrus pile-up at the SiO2/Si interface", International Conference on Solid State Devices and Materials,Hamamatsu,1997,402-403(1997).


【1996】

  1. H. Fujioka, H.-J. Wann, D.-G. Park, Y.-C. King, Y.-F. Chyan, M. Oshima and C. Hu, "Tunneling current through MIS structures with ultra-thin insulators" Mat. Res. Soc., Symp. Proc. Spring Meeting, 1996.
  2. S. Heun, M. Sugiyama, S. Maeyama, Y. Watanabe, K. Wada and M Oshima, "Growth of Si on different GaAs surfaces: A comparative study" Phys. Rev. B53 13534-13541 (1996).
  3. S. Heun, M. Sugiyama, S. Maeyama, Y. Watanabe, K. Wada and M Oshima, "The influence of an ultrathin pseodomorphic interface control layer of Si on the growth of SrF2 on GaAs" Materials Science Forum Vol. 203 (1996) 129-133.
  4. Y. Iketaki, Y. Horikawa, S. Mochimaru, k. Nagai, T. Kiyokura, M. Oshima and A. Yagishita, "Study of the X-ray microbeam for scanning microscope", J. Electron Spectr. Rel. Phenomena 80 353-356 (1996).
  5. F. Maeda, Y. Watanabe and M Oshima, "GaSb-growth study by realtime crystal-growth analysis system using synchrotron radiation photoelectron spectroscopy" Jpn. J. Appl. Phys. 35 4457-4462 (1996).
  6. F. Maeda, Y. Watanabe and M Oshima, "Surface termination of GaAs(001) by Sb dimers" Surf. Sci. 357-358 (1996) 540-544.
  7. F. Maeda, Y. Watanabe and M Oshima, "Photoelectron spectroscopy onreconstructed GaSb(001)", J. Electron Spectr. Rel. Phenomena 80, 225-228 (1996).
  8. S. Maeyama. M. Sugiyama, and M. Oshima, "(NH4)2Sx-treated GaAs surfaces studied by soft x-ray photoelectron spectroscopy and S K-edged XANES" J. Electron Spectr. Rel. Phenomena 80 209-212 (1996).
  9. Y. Muramatsu, M. Oshima, J. Kawai, S. Tadokoro, H. Adachi, A. Agui, S. Shin, H. kato, H. Kohzuki and M. Motoyama, "Enhanced resonant X-ray emissions of mechanically milled hexagonal Boron Nitride in Boron K-shell excitation" Phys. Rev. Lett. 76 (1996) 3846-3849.
  10. M. Oshima, Y. Watanabe, M. Sugiyama and S. Heun., "Initial stages of nanocrystal growth of compound semiconductors on Si substrates" J. Electron Spectr. Rel. Phenomena 80, 129-132 (1996).
  11. M. Oshima, M. Sugiyama, F. Maeda and Y. Watanabe, "Photoelectron spectroscopy and X-ray standing waves of atomically controlled GaAs surfaces and formation of nano-crystals" Proceedings of the 4th Int'l Conf. on synchrotron radiation sources and 2nd Asian forum on synchrotron radiation, (1995) p. 303-310, Kyongju, Korea, published in 1996.
  12. M. Sugiyama, S. Maeyama and M Oshima, "A soft x-ray standing wave measurement system for analyzing compound semiconductor surfaces by molecular beam epitaxy" Rev. Sci. Instrum. 67 3182-3186 (1996).
  13. M. Sugiyama, S. Maeyama and M Oshima, "Chemical state resolved x-ray standing wave analysis of an (NH4)2Sx-treated GaAs surface" Proc. Oji Semanar on Chemical Processes at Surfaces based on Atomic Scale Structure and Dynamics (Saitama), P1-14, (1996) "edited by K. Tanaka.
  14. M. Sugiyama, S. Maeyama and M Oshima, "X-ray standing wave study of a Si-adsorbed GaAs(001) surface ", Appl. Phys. Lett. 68 3731-3733 (1996).
  15. M. Sugiyama, S. Maeyama and M Oshima, "X-ray standing wave study of the S-passivated InP(001) surface" J. Vac. Sci. Technol. A14 1812-1814 (1996).
  16. Y. Watanabe, F. Maeda and M Oshima, "Synchrotron radiation photorlectron spectroscopy study of bonding at heterointerfaces between InAs nanocrystals and Se-terminated GaAs", J. Electron Spectr. Rel. Phenomena 80, 221-224 (1996).


【1995】

  1. H. Asano, M. Suzuki, T. KIyokura, F. Maeda, Y. Watanabe, A. Menz and M. Oshima, "Photoelectron spectroscopy of EuBa2Cu3O y thin film surfaces treated by an electron cyclotron resonance oxygen ion beam" Jpn. J. Appl. Phys. 34 (1995) L433-L436.
  2. S. Heun, M. Sugiyama, S. Maeyama, Y. Watanab and M Oshima, "Morphology of Thin SrF2 Films on InP(111) Studied by Reflection High-Energy Electron Diffraction", J. Crystal Growth 150 (1995) 1108 1-4.
  3. S. Heun, M. Sugiyama, S. Maeyama, Y. Watanabe and M. Oshima, "Electronic and structural properties of thin SrF2 films on InP" Proc. of the 7th Int'l Conf. on Indium Phosphide and Related Materials, Sapporo (1995) p. 269.
  4. S. Heun, M. Sugiyama, S. Maeyama, Y. Watanabe and M. Oshima, "Initial stages of the growth of SrF2 on InP" Phys. Rev. B52 (1995) 14917-14926.
  5. S. Heun, M. Sugiyama, S. Maeyama, Y. Watanabe, K. Wada and M. Oshima, "The influence of an ultrathin pseudomorphic interface control layer of Si on the growth of SrF2 on GaAs" Materials Research Forum 203 (1995) 129-133.
  6. T, Kiyokura, F. Maeda, Y. Watanabe, M. Oshima, H. Asano and M. Suzuki, "Effect of water immersion on surface reactions for EuBa2Cu3Oy thin films" Jpn. J. Appl. Phys. 34 (1995) 1396-1400.
  7. F. Maeda, Y. Watanabe and M Oshima, "Initial Stages of Ag Growth on Sb-Terminated GaAs(001)" J. Crystal Growth 150 (1995) 1164-1168.
  8. S. Maeyama, M. Sugiyama, S. Heun and M. Oshima, "Sulfur-treated InP surfaces studied by soft X-ray photoemission spectroscopy" Proc. of the 7th Int'l Conf. on Indium Phosphide and Related Materials, Sapporo (1995) p. 825.
  9. S. Maeyama. M. Sugiyama, S. Heun and M. Oshima, "X-ray Absorption Fine Structure Studies of Sulfur Interlayers in Molecular Beam Epitaxy Grown SrF2/S/GaAs(111), J. Crystal Growth 150 (1995) 1122-1125.
  10. T. Scimeca, Y. Watanabe, R. Berrigan and M. Oshima, "Surface oxidation of Selenium treated GaAs(100)" J. Vac. Sci. Technol. B12 (1995) 3090-3094.
  11. T. Scimeca, Y. Watanabe, F. Maeda and M. Oshima, "A photoemission study of Al and Au overlayers on Se/GaAs(100)" 表面科学Vol.16 (1995) 326-333.
  12. M. Sugiyama, S. Maeyama, F. Maeda and M. Oshima, "Sb/GaAs surface structures analyzed by using soft X-ray standing waves" Phys. Rev. B52 (1995) 2678-2681.
  13. M. Sugiyama, S. Maeyama, S. Heun and M. Oshima, "Chemical-state-resolved x-ray standing wave analysis using chemical shift in photoelectron spectra of sulfur-passivated GaAs(001)" Phys. Rev. B51 (1995) 14778-14781.
  14. M. Sugiyama, S. Maeyama and M Oshima, "Ordering of Sulfur Interlayer in Molecular Beam Epitaxy-Grown SrF2/S/GaAs(111)A and B", J. Crystal Growth 150 (1995) 1098-1103.
  15. Y. Watanabe, F. Maeda and M. Oshima, "InAs epitaxial nanocrystal grown on Se-treated GaAs(001)" Inst. Phys. Conf. Ser. No.141: Chapter 2 (1995) p.143.
  16. Y. Watanabe, F. Maeda and M Oshima, "Formation of InSb Nanocrystals on Se-Terminated GaAs(001)", J. Crystal Growth 150 (1995) 863-867.


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